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SavantIC Semiconductor Product Specification Silicon PNP Power Transistors MJW21191 DESCRIPTION *With TO-247 package *Complement to type MJW21192 *Wild area of safe operation APPLICATIONS *Designed for power audio output, high power drivers in audio amplifiers PINNING PIN 1 2 3 Emitter Collector Base DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector MAX -150 -150 -5 -8 -16 -2 100 -65~150 -65~150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 0.65 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN MJW21191 SYMBOL TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=-10mA ;IB=0 -150 V VCE(sat)-1 VCE(sat)-2 VBE(ON) Collector-emitter saturation voltage IC=-4A; IB=-0.4A -1.0 V Collector-emitter saturation voltage IC=-8A; IB=-1.6A -2.0 V Base-emitter on voltage IC=-4A ; VCE=-2V -2.0 V ICES Collector cut-off current VCB=-150V; IE=0 -10 A IEBO Emitter cut-off current VEB=-5V; IC=0 -10 A hFE-1 DC current gain IC=-4A ; VCE=-2V 15 100 hFE-2 DC current gain IC=-8A ; VCE=-2V 5 fT Transition frequency IC=-1.0A ; VCE=-10V,f=1MHz 4.0 MHz 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE MJW21191 Fig.2 Outline dimensions 3 |
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